US researchers have used modified vertical structures and extreme cooling to push silicon germanium (SiGe) bipolar transistor operation through 500GHz. “The motivation was to use bandgap engineering ...

The basic construction of Bipolar Junction Transistor (BJT) comprises of two P-N junctions producing three connecting terminals with each terminal being given a name to identify it from the other two.

Diodes has expanded its series of automotive-compliant bipolar transistors with 12 NPN and PNP devices designed to achieve ultra-low V CE(sat). With a saturation voltage of just 17 mV at 1 A and ...

How many remote controls do you have in your home? Don’t you wish all these things were better integrated somehow, or that you could add remote control functionality to a random device? It’s a common ...

Also called a "bipolar junction transistor" (BJT), it is one of two major transistor categories; the other is "field-effect transistor" (FET). Although the first transistor was bipolar and the first ...

A new type of transistor structure, invented by scientists at the University of Illinois at Urbana-Champaign, has broken the 600 gigahertz speed barrier. The goal of a terahertz transistor for ...

The DXTN/P 78Q and 80Q series feature ultra-low VCE(sat) NPN and PNP transistors designed for demanding automotive power switching and control applications. These devices promise enhanced conduction ...

FULLER details of the new Westinghouse Electric development of a silicon carbide transistor capable of operating at above 650 deg. F were given in a paper presented at a meeting in the US of the ...

It used to be a rite of passage to be able to do the math necessary to design various bipolar transistor amplifier configurations. This doesn’t come up as often as it used to, but it is still a good ...