This paper will focus on the latest type of SiC device, the MOSFET. It will present SiC device characteristics and what benefits this breakthrough technology delivers for power systems. Work in the ...
DUBLIN--(BUSINESS WIRE)--The "GaN Power Devices - Global Strategic Business Report" has been added to ResearchAndMarkets.com's offering. The global market for GaN Power Devices was estimated at US$346 ...
Novel conversion architectures, used in conjunction with wide-bandgap devices, are being used to develop compact, cool-running onboard chargers for EVs that support vehicle-to-grid operation and fit ...
Power devices continue to evolve rapidly as SiC and GaN technologies become more efficient, integrated, and cost-effective. Meanwhile, steady improvements in MOSFET structures and processes enable ...
Renesas Electronics Corporation, a premier supplier of advanced semiconductor solutions, introduced the industry’s first ...
High voltage silicon carbide (SiC) power devices represent a transformative advance in power electronics, offering superior voltage handling capability, high temperature performance and enhanced ...
Texas Instruments Inc. (TI) has launched two power-conversion device portfolios that deliver higher power density in smaller spaces. These new power devices include the 100-V integrated gallium ...
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